Stoichiometric composition variation of the AlN thin films grown by using reactive DC magnetron sputtering
- Authors
- Cho, S.; Lee, M.; Lee, S.; Chang, J.
- Issue Date
- 2017
- Publisher
- The Korean Physical Society
- Keywords
- AlN; Deposition mechanism; ITO/quartz; Reactive DC magnetron sputtering; Stoichiometry
- Citation
- New Physics: Sae Mulli, v.67, no.8, pp 929 - 935
- Pages
- 7
- Journal Title
- New Physics: Sae Mulli
- Volume
- 67
- Number
- 8
- Start Page
- 929
- End Page
- 935
- URI
- https://www.kriso.re.kr/sciwatch/handle/2021.sw.kriso/636
- DOI
- 10.3938/NPSM.67.929
- ISSN
- 0374-4914
2289-0041
- Abstract
- The growth mechanism with changing plasma power and reactive gas flow rate of AlN thin films grown by using reactive-gas DC magnetron sputtering on ITO/quartz substrates was investigated. We discusse the growth mechanism in terms of the growth rate, surface morphology, and crys-tallinity. The plasma power induces an increase in the growth rate mainly due to an increase in the Al supply whereas the nitrogen gas flow affects the atomic nitrogen supply while the Al supply decreases due to reactions at the target’s surface. Therefore, the sputtering conditions, such as the plasma power and the nitrogen gas flow, have remarkable influences on the sputtering process; consequently, the stoichiometry of the AlN layer is changed, which is very important for high-quality thin-film growth. ? 2017, The Korean Physical Society. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 해양공공디지털연구본부 > 해사안전·환경연구센터 > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.