Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template
DC Field | Value | Language |
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dc.contributor.author | Cho, Sungmin | - |
dc.contributor.author | Choi, Sungkuk | - |
dc.contributor.author | Cho, Youngji | - |
dc.contributor.author | Lee, Sangtae | - |
dc.contributor.author | Lee, Moonjin | - |
dc.contributor.author | Chang, Jiho | - |
dc.date.accessioned | 2021-08-03T04:28:45Z | - |
dc.date.available | 2021-08-03T04:28:45Z | - |
dc.date.issued | 2018-03-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.kriso.re.kr/sciwatch/handle/2021.sw.kriso/469 | - |
dc.description.abstract | This study examined the growth of GaN layers by molecular beam epitaxy (MBE) using a tungsten carbide (WC) buffer sputtered on a Si(111) surface. The chemical stability of the WC layer against the Ga-Si interaction was verified experimentally. A low-temperature (LT) buffer is essential for the growth of single-crystal-quality, high-temperature gallium nitride (HT-GaN) on a WC surface. In addition, dislocation termination techniques, such as interface formation and the annealing of the buffer layer, were adopted to improve the crystalline quality. The HT-GaN sample grown on the annealed double-buffer-layer (AlN/GaN) revealed an X-ray diffraction full-width at half maximum, Hall carrier density, and carrier mobility of 2260 arcsecs, 4.39x10(18) cm(3), and 19.4 cm(2)/Vs, respectively. The crystalline quality of the GaN layer is discussed in comparison with previously reported GaN/sapphire samples. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.1016/j.tsf.2018.01.057 | - |
dc.identifier.scopusid | 2-s2.0-85041480139 | - |
dc.identifier.wosid | 000427524100035 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.649, pp 232 - 236 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 649 | - |
dc.citation.startPage | 232 | - |
dc.citation.endPage | 236 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SI(111) SUBSTRATE | - |
dc.subject.keywordPlus | BUFFER LAYERS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordAuthor | Gas-source molecular beam epitaxy | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Tungsten carbide | - |
dc.subject.keywordAuthor | Buffer layer | - |
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